A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability
Long Zhang, Jie Ma, Min Luo, Wangming Cui, Peigang Liu, Siyang Liu, Jiaxing Wei, Sheng Li, Weifeng Sun, Nailong He, Sen Zhang, Song Bai
Abstract
For the first time, a silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring segmented deep oxide trenches (SDOTs) is proposed, which aims to suppress the saturation current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> ) and enhance the short-circuit withstanding capability. SDOTs, refilled by the polysilicon and shorted to the emitter electrode, are inserted in the region nearby the inversion channel. In the ON-state, the electric potential at the channel end can be modified and effectively lowered by the grounded SDOTs, which indicates the reduced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> and prolonged short-circuit withstanding time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula> ). Compared with the conventional SOI LIGBT, the proposed SOI LIGBT achieves a 49.5% decrease in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {CE}} = {10}$ </tex-math></inline-formula> V and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GE}} = {15}$ </tex-math></inline-formula> V, and a 406% increase in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {CE}} = {400}$ </tex-math></inline-formula> V and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GE}} = {15}$ </tex-math></inline-formula> V.