Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure
Rongxuan Zhao, Mingze He, Lun Wang, Ziqi Chen, Xiaomin Cheng, Hao Tong, Xiangshui Miao
Topics & Concepts
Materials sciencePhase-change memoryChalcogenideNanowireAspect ratio (aeronautics)Amorphous solidOptoelectronicsComputer data storageTransmission electron microscopyPhase-change materialNanotechnologyPhase changeComputer scienceEngineering physicsComputer hardwareCrystallographyEngineeringLayer (electronics)ChemistryPhase-change materials and chalcogenidesAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials