Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
Jingli Wang, Lejuan Cai, Jiewei Chen, Xuyun Guo, Yuting Liu, Zichao Ma, Zhengdao Xie, Hao Huang, Mansun Chan, Ye Zhu, Lei Liao, Qiming Shao, Yang Chai
Abstract
transferred metal gate (TMG) FETs exhibit sub-1 V operation voltage and a subthreshold slope close to thermal limit (60 mV/dec), owing to intrinsically high junction capacitance and the high-quality interface. The TMG and back gate enable logic functions in a single transistor with small footprint.
Topics & Concepts
Ideal (ethics)Subthreshold conductionSubthreshold slopeSemiconductorMetalOptoelectronicsMaterials sciencePhysicsCondensed matter physicsTransistorMOSFETQuantum mechanicsVoltageMetallurgyEpistemologyPhilosophySemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications