Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission
Xuanhao Wang, Chenglin Shang, An Pan, Xingran Cheng, Tao Gui, Shuai Yuan, Chengcheng Gui, Keshuang Zheng, Peijie Zhang, Xiaolu Song, Yanbo Li, Liangchuan Li, Cheng Zeng, Jinsong Xia
Abstract
We successfully demonstrate a monolithic integrated dual-polarization in-phase/quadrature (IQ) modulator based on thin-film lithium niobate platform with a silicon substrate, which consists of IQ modulators, spot-size converters, and a polarization rotator combiner. When coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.
Topics & Concepts
Lithium niobateMaterials scienceOptoelectronicsSiliconPolarization (electrochemistry)Insertion lossOpticsChemistryPhysicsPhysical chemistryPhotonic and Optical DevicesPhotorefractive and Nonlinear OpticsAdvanced Fiber Laser Technologies