AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs
Hanlin Xie, Zhihong Liu, Wenrui Hu, Yu Gao, Hui Teng Tan, Kenneth E. Lee, Yong‐Xin Guo, Jincheng Zhang, Yue Hao, Geok Ing Ng
Abstract
Abstract AlN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of V d = 3.5 V/5 V, the 90 nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency of 62%/58%, a maximum output power density ( P outmax ) of 0.44 W mm −1 /0.84 W mm −1 and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.