Ultrabroadband density of states of amorphous In-Ga-Zn-O
Kyle T. Vogt, Christopher E. Malmberg, Jacob C. Buchanan, George W. Mattson, G. Mirek Brandt, Dylan B. Fast, Paul H.-Y. Cheong, John F. Wager, Matt W. Graham
Abstract
The density of states of amorphous-InGaZnOx was measured on thin-film transistors, and the spectral and temporal photoconductive responses classify each sub-gap peak as either electron-donor or acceptor vacancies.
Topics & Concepts
Materials sciencePhotoconductivityAmorphous solidDensity of statesOptoelectronicsAcceptorSpectral densityOpticsCondensed matter physicsPhysicsMolecular physicsThin-Film Transistor TechnologiesGa2O3 and related materialsTransition Metal Oxide Nanomaterials