Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization
Erika Covi, Wei Wang, Yu‐Hsuan Lin, Matteo Farronato, Elia Ambrosi, Daniele Ielmini
Abstract
Volatile resistive switching random access memory (RRAM) devices are drawing attention in both storage and computing applications due to their high ON-/ OFF-ratio, fast switching speed, low leakage, and scalability. However, these devices are relatively new and the physical switching mechanisms are still under investigation. A thorough understanding and modeling of the physical dynamics underlying filament formation and self-dissolution are of utmost importance in view of future integration of volatile devices in neuromorphic systems and in memory arrays. To assess the physical mechanisms and develop appropriate models, though, the electrical properties of the device have to be characterized. In this article, we present an extensive study of Ag/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based volatile RRAM devices. Important parameters, such as switching time, switching voltage, and retention time are investigated as a function of the stimulation conditions. A physical explanation is provided and the applicability of the device in neuromorphic systems is discussed.