Review of the SiC LDMOS power device
Ziwei Hu, Jiafei Yao, Ang Li, Qi Sun, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang, Yufeng Guo
Abstract
Abstract Silicon carbide (SiC), as a third-generation semiconductor material, possesses exceptional material properties that significantly enhance the performance of power devices. The SiC lateral double-diffused metal–oxide–semiconductor (LDMOS) power devices have undergone continuous optimization, resulting in an increase in breakdown voltage (BV) and ultra-low specific on-resistance ( R on,sp ). This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices, including the trench-gate technology, reduced surface field (RESURF) technology, doping technology, junction termination techniques and so on. The paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.