Terahertz-wave detector on silicon carbide platform
Hiroshi Itô, Norihiko Shibata, Tadao Nagatsuma, Tadao Ishibashi
Abstract
Abstract We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, the fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide-input port. It exhibited a minimum noise equivalent power as low as 3 × 10 –19 W Hz −1 at around 300 GHz for a local oscillator power of only 30 μ W.
Topics & Concepts
Terahertz radiationDetectorOptoelectronicsMaterials scienceDiodeWaveguideSilicon carbideNoise (video)Substrate (aquarium)Port (circuit theory)Power (physics)SiliconOpticsElectrical engineeringPhysicsEngineeringComputer scienceGeologyImage (mathematics)MetallurgyArtificial intelligenceOceanographyQuantum mechanicsPhotonic and Optical DevicesTerahertz technology and applicationsPhotonic Crystals and Applications