Analytical solution of a rotating semiconductor elastic medium due to a refined heat conduction equation with hydrostatic initial stress
Kh. Lotfy, Alaa A. El‐Bary, E.A. Ismail, Haitham M. Atef
Abstract
The semiconductor elastic medium in the context of the photothermal theory under the influence of rotation field is studied. A novel model of the governing equations is investigated due to the refined multi-phase-lags with the thermal relaxation times of the heat equation with the hydrostatic initial stress during transport process of the photothermal phenomenon. The interaction between the multi-waves of elastic-thermal-plasma is obtained. The normal mode method in the two dimensions is applied to obtain the exact solutions of the basic physical quantities under investigation. Plasma, thermal and mechanical loads have been applied on the free surface of the semi-infinite semiconductor elastic medium to get the complete solutions of the basic physical fields. Some comparisons are shown graphically and they are discussed as a function of thermal memories with the variation of some parameters. Silicon (Si) material is used to make the numerical simulation and to display the sensitivity to the variation of the rotation parameter.