Multilevel Logic Operation and Artificial Synaptic Plasticity Based on Pectin Transient Memristor
Ming Liu, Qi Yuan, Bingxun Li, Yanmei Sun
Abstract
The biotransient degradable memristor of Al/pectin-graphene oxide (GO)/ITO was prepared by using pectin-doped GO as the medium layer. The doped device has good bipolar resistance switching behavior, an excellent on/off current ratio (10 4 ), and negligible electrical degradation, which can be observed in 100 repeat cycles. Due to the ionization of the carboxyl group of the pectin film, it can be dissolved in deionized water in 30 min and in acetic acid solution in 20 min, which is in line with the development trend of transient electronics. The device has remarkable information storage and synaptic characteristics, which can realize various resistance states of the memristor and can realize the logic operation of an “OR gate” and “AND gate”. It has short-term potentiation, short-term depression and long-term potentiation, and has long-term durable synaptic performance and logic coding ability. Therefore, the device has potential application value in the fields of classified information storage, wearable and implantable electronic devices, and multilevel storage and is expected to make new progress in the latest research system of brain-like implantable artificial synapses based on biomemristors.