Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate
Samiul Hasan, Abdullah Mamun, Kamal Hussain, Mikhail Gaevski, Iftikhar Ahmad, Asif Khan
Topics & Concepts
Materials scienceMetalorganic vapour phase epitaxySapphireNitrideSubstrate (aquarium)DislocationFull width at half maximumEpitaxyRaman spectroscopyNitrogenAnalytical Chemistry (journal)Laser linewidthOptoelectronicsComposite materialOpticsLaserChemistryChromatographyGeologyPhysicsOrganic chemistryLayer (electronics)OceanographyGaN-based semiconductor devices and materialsAcoustic Wave Resonator TechnologiesGa2O3 and related materials