Wafer‐Scale Dry‐Transfer of Single‐Crystalline Transition Metal Dichalcogenides
Jichuang Shen, Xiang Xu, Wenhao Li, Tong Jiang, Xuechun Sun, Han Chen, Ji Chen, Long‐Jiang Yu, Jingnan Dong, Tongbo Wei, Huaze Zhu, Wei Kong
Abstract
Abstract The twisting and stacking of 2D materials have emerged as transformative strategies for discovering novel physical phenomena and designing advanced materials and devices. A significant challenge, however, is achieving pristine interfaces with precise angular control while maintaining the long‐range order over large areas. In this work, a novel dry‐transfer method is presented that enables the ultra‐clean integration of epitaxial, single‐crystalline transition metal dichalcogenides (TMDCs) via vacuum thermocompression bonding (VTCB). This technique facilitates the fabrication of wafer‐scale twisting and stacking of single‐crystalline TMDCs to form homo‐and heterostructures with intrinsic material properties and precise angular control. The layer‐by‐layer reconstruction of single‐crystalline multilayer 2H‐and 3R‐MoS 2 is demonstrated, with structural, electrical, and optical properties comparable to those of the bulk counterpart. Furthermore, the approach is fully compatible with standard semiconductor fabrication workflows and equipment, offering a scalable pathway for automated high‐throughput fabrication. This findings provide a new avenue for the large‐scale production of multi‐stacked materials and twist‐electronic device arrays.