Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM
Tetsuo Endoh, H. Honjo, K. Nishioka, Shoji Ikeda
Abstract
In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].
Topics & Concepts
Magnetoresistive random-access memorySpintronicsMaterials scienceReliability (semiconductor)Engineering physicsOptoelectronicsRandom access memoryComputer scienceEngineeringCondensed matter physicsPhysicsFerromagnetismComputer hardwarePower (physics)Quantum mechanicsMagnetic properties of thin filmsCharacterization and Applications of Magnetic NanoparticlesFerroelectric and Negative Capacitance Devices