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GaN Bidirectional Switches: The Revolution is Here

Davide Bisi

2025IEEE Power Electronics Magazine20 citationsDOI

Abstract

GaN bidirectional switches unlock the design of single-stage ac-dc topologies with smaller part count and higher efficiency than incumbent dual-stage topologies. Because of GaN lateral architecture, bidirectional switches can be monolithically integrated on the same chip, conducting current and blocking voltage in both directions. Being monolithically integrated, GaN bidirectional switches share a single drift region and have no back-to-back drain contacts, resulting in a significant figure of merit advantage. They fit in one package for significant cost and system size reduction. In this article, we’ll review the main single-stage topologies and bidirectional device architectures. We’ll discuss prototype results and future products. We’ll provide guidelines on how to use GaN bidirectional switches easily and safely and we’ll discuss qualification and reliability procedures.

Topics & Concepts

Computer scienceTelecommunicationsElectrical engineeringEngineeringGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices
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