Deep-Subwavelength Raman Imaging of the Strained GaP Nanowires
V. A. Sharov, Alexey D. Bolshakov, Vladimir V. Fedorov, Stéphanie Bruyère, G. É. Cirlin, P. A. Alekseev, Ivan S. Mukhin
Abstract
Strain engineering is a powerful tool that allows tuning of the optical and electronic properties of the nanostructures, opening new pathways for the nanowire (NW)-based practical applications. We introduce a complex study of individual bent GaP NWs based on micro-Raman mapping. Numerical modeling of the mapping data is performed to analyze spatial features in the Raman signal collected from the tensed and compressed areas of the NW with high resolution. The analysis revealed removal of a degeneracy and spectral shift of the modes arising from the linear strain distribution across the NW. Strain-dependent behavior of the combined longitudinal and transverse acoustic (LA + TA) band for single NW under uniaxial stress is studied for the first time. We introduce the novel Raman-based deep-subwavelength technique for the investigation of the structural and optoelastic properties of the nanosized objects without the use of tip-enhanced effects.