Effects of High-Field Velocity Saturation on the Performance of V-Doped 6H Silicon-Carbide Photoconductive Switches
Langning Wang, Xu Chu, Qilin Wu, Tao Xun, Hanwu Yang, Juntao He, Jun Zhang
Abstract
Velocity saturation characteristics of a V-doped 6H silicon-carbide (SiC) photoconductive switch under high electric field are presented. A vertical-geometry switch device based on vanadium-compensated SiC is triggered by a 532-nm laser pulse with light peak power of several hundred kW and operational voltages from 2 to 20 kV. The maximum electrical peak power achieved by the device is up to 1 MW (~50-A, 20-kV, 1.1-ns pulsewidth). When the working voltage is increased to increase output power, the carrier-velocity saturation under high electric field unavoidably impedes the current growth and directly limits the peak power. The parameters of parallel high-field-dependent mobility are obtained with different fields and laser energies: low-field mobility μ = 227 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V s and fitting parameter β = 1.7. With working voltage increasing steadily, a crack-forming process results in device degradation as a result of large current and high electric field. The I - V characteristic curves of the simulations and tests show current saturation and possible damage under high electric field.