Exploring the optical and electrical properties of CsSnBr3 for optoelectronic technologies
Dhaifallah R. Almalawi, Mohamed Bouzidi, Idris H. Smaili, N. I. Aljuraide, Ali S. Alzahrani, A. Saftah, Mohamed Ben Bechir
Abstract
In this study, we report the structural, optical, and electrical properties of lead-free CsSnBr 3 perovskite synthesized via melt growth. UV–Vis absorption and Tauc plot analysis reveal a direct optical band gap of 1.75 eV. Photoluminescence and time-resolved PL measurements confirm efficient radiative recombination and reveal carrier lifetimes on the nanosecond scale. Impedance spectroscopy and dielectric analysis across 300–400 K show non-Debye relaxation and support a small-polaron hopping conduction mechanism, with activation energies consistent with frequency-dependent conductivity. A unique correlation is established between the optical carrier dynamics and low-frequency electrical behavior. These findings contribute to a deeper understanding of charge transport in CsSnBr 3 and support its potential use in lead-free optoelectronic applications such as photodetectors and solar energy conversion.