Surface termination and Schottky-barrier formation of In <sub>4</sub> Se <sub>3</sub> (001)
Archit Dhingra, P. V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, T. M. Nenchuk, Simeon Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai‐Ning Mei, Keisuke Fukutani, Jia‐Shiang Chen, P. A. Dowben
Abstract
Abstract The surface termination of In 4 Se 3 (001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C 2v mirror plane symmetry. The surface termination of the In 4 Se 3 (001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In 4 Se 3 (001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.