Indium doping-assisted monolayer Ga<sub>2</sub>O<sub>3</sub> exfoliation for performance-enhanced MOSFETs
Penghui Li, Linpeng Dong, Chong Li, Bin Lü, Chen Yang, Bo Peng, Wei Wang, Yuanhao Miao, Weiguo Liu
Abstract
A more efficient solution to obtain ML Ga 2 O 3 by exfoliation from indium-doped bulk β-Ga 2 O 3 . Investigated exfoliation energy, stability, band structure, and carrier mobility, and the transport properties of In-doped ML Ga 2 O 3 MOSFETs are simulated.
Topics & Concepts
Exfoliation jointIndiumMaterials scienceDopingMonolayerElectron mobilityOptoelectronicsNanotechnologyGrapheneGa2O3 and related materialsSemiconductor materials and devicesElectronic and Structural Properties of Oxides