Si Incorporation into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-Point Memory
Huai‐Yu Cheng, I. T. Kuo, Wei-Chih Chien, C. W. Yeh, Y. C. Chou, Nanbo Gong, L. Gignac, C. H. Yang, Chuanwei Cheng, C. Lavoie, Marinus Hopstaken, Robert L. Bruce, L. Buzi, Erh-Kun Lai, Fabio Carta, A. Ray, M. H. Lee, H. Y. Ho, W. Kim, M. BrightSky, H.L. Lung
Abstract
By incorporating Si into AsSeGe system, we demonstrate a 3D stackable OTS+PCM memory in a 1k by 1k cross-point memory array with extremely low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tS</sub> drift (~0V after 3 days from programming), wide V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tS</sub> /V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tR</sub> window (>2V main distribution memory window), high endurance (>2E11 cycles), excellent I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> and thermal stability. So far, attempts to improve the thermal stability of AsSeGe system sacrifice I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> and cycling endurance. We show that Si incorporation relaxes this trade-off and can greatly improve the thermal stability and cycling endurance while also achieving good I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> . In particular the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> of AsSeGeSi selector is improved over the AsSeGe system for films of 20 nm.