Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors
Yongjeong Lee, Sungyeop Jung, Andrew Plews, A. Nejim, Olivier Simonetti, L. Giraudet, S. D. Baranovskiǐ, Florian Gebhard, Klaus Meerholz, Sungjune Jung, Gilles Horowitz, Yvan Bonnassieux
Abstract
Correct parameterization of the Gaussian disorder model (GDM) on spatially random sites is necessary for a complete description of charge transport in disordered materials and concomitant device characteristics. Because the GDM on spatially random sites considers both energetic and spatial disorder, it is superior to the GDM on a cubic lattice. However, analytical arguments and experimental evidence are still lacking for correct parameterization of the model over a wide range of model parameters, energetic and spatial disorder, and electric fields. We show that the model requires a set of parameters to correctly account for high mobility and its charge density dependence, and we develop such a model. The model is implemented in a numerical simulation tool for comparison with the measured device characteristics. Accurate agreement with experimental data, particularly with the high mobility values in organic field-effect transistors, is achieved throughout a wide range of temperature by adjusting both the localization length and the attempt-to-escape frequency.