Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory
Tsung‐Ming Tsai, Chun-Chu Lin, Wen‐Chung Chen, Cheng-Hsien Wu, Chih-Cheng Yang, Yung‐Fang Tan, Peiyu Wu, Hui‐Chun Huang, Yong‐Ci Zhang, Li-Chuan Sun, Sheng‐Yao Chou
Topics & Concepts
ElectroformingResistive random-access memoryMaterials scienceNon-blocking I/ONickel oxideNickelThin filmOptoelectronicsControllabilityResistive touchscreenX-ray photoelectron spectroscopyTinThermal conductionOxideNanotechnologyElectrical engineeringChemistryComposite materialMetallurgyVoltageLayer (electronics)Chemical engineeringEngineeringBiochemistryApplied mathematicsMathematicsCatalysisAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices