70-μm-Body Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency
Hehe Gong, Feng Zhou, Xinxin Yu, Weizong Xu, Fangfang Ren, Shulin Gu, Hai Lu, Jiandong Ye, Rong Zhang
Abstract
In this letter, we report 9-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diodes (SBDs) with a thin-body thickness of 70 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> . By implementing substrate thinning strategy and dual field plate structures, the resultant device exhibits a high forward current of 20 A, a low differential on-resistance of 57 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula> , a small subthreshold slope of 65 mV/dec and a decent breakdown voltage of 355 V. In particular, a robust electrothermal ruggedness is achieved, including a low junction-to-case thermal resistance of 1.48 K/W and a high surge current of 59 A. Such superior performance is further validated by performing 150-W system-level power factor correction circuit measurements, delivering a record-high conversion efficiency of 98.9%. These results reveal the promise of die-level structure thermal management of the Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> SBDs for high-power applications.