InP nanowire light-emitting diodes with different pn-junction structures

S. Kimura, Hidenori Gamo, Yu Katsumi, Junichi Motohisa, Katsuhiro Tomioka

2022Nanotechnology12 citationsDOI

Abstract

We report on the characterization of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with different pn junctions (axial and radial). The series resistance tended to be smaller in the NW-LED using core-shell InP NWs with a radial pn junction than in the NW-LED using InP NWs with an axial pn junction, indicating that radial pn junctions are more suitable for current injection. The electroluminescence (EL) properties of both NW LEDs revealed that the EL had three peaks originating from the zinc-blende (ZB) phase, WZ phase, and ZB/WZ heterojunction. Transmission electron microscopy showed that the dominant EL in the radial pn junction originated from the ZB/WZ interface across the stacking faults.

Topics & Concepts

Materials scienceWurtzite crystal structureNanowireLight-emitting diodeOptoelectronicsHeterojunctionDiodeElectroluminescenceEquivalent series resistanceTransmission electron microscopyPhase (matter)p–n junctionSemiconductorZincNanotechnologyLayer (electronics)VoltageOrganic chemistryChemistryPhysicsMetallurgyQuantum mechanicsNanowire Synthesis and ApplicationsSemiconductor materials and interfacesGaN-based semiconductor devices and materials