Performance Investigation of Dual Trench Split-Control-Gate MOSFET as Hydrogen Gas Sensor: A Catalytic Metal Gate Approach
Rittik Ghosh
Abstract
In this article, Dual Trench Split-Control-Gate MOSFET (DT-SCG-MOSFET) based hydrogen gas sensor considering catalytic palladium metal gate approach is simulated using SILVACO ATLAS TCAD. The inner gate architecture in addition to the outer control gates provides enhanced carrier control. Shift in surface potential, subthreshold current, linear current and threshold voltage are used to investigate the performance of the proposed gas sensor. The contribution of analog metrices like the transconductance and parasitic capacitances are explored thoroughly. Sensitivity as a function of subthreshold current as well as change in threshold voltage for the presence and absence of hydrogen gas molecules have been discussed. Results exhibit the superiority of the proposed gas sensor compared with the reported models in terms of sensitivity and Ion/Ioff ratio and suitable for hydrogen gas detection.