Enhancement of the thermoelectric performance of half-metallic full-Heusler Mn2VAl alloys via antisite defect engineering and Si partial substitution
Hezhang Li, Kei Hayashi, Zhicheng Huang, Hiroto Takeuchi, Gakuto Kanno, Jing‐Feng Li, Yuzuru Miyazaki
Abstract
A half-metallic full-Heusler Mn2VAl alloy is a potential p-type thermoelectric material that can directly generate electricity from waste heat via the Seebeck effect. For practical use, the Seebeck coefficient S of Mn2VAl should be increased while maintaining a high electrical conductivity σ from its half-metallic character. Herein, we achieved this objective through antisite defect engineering. Theoretically, it was predicted that the S was maximized by regulating partial density of states of majority-spin sp-electrons through the control of the fraction of antisite defect, fAD, between V and Al atoms in Mn2VAl. Experimentally, a significant increase in S and a slight decrease in σ were observed for an Mn2VAl sample with an optimal fAD = 33 %, enhancing the thermoelectric power factor PF by 2.7 times from an Mn2VAl sample with fAD = 14 %. Furthermore, we combined the antisite defect engineering with a partial substitution method. An Mn2V(Al0.96Si0.04) sample with fAD = 33 % exhibited the highest PF = 4.5×10−4 W m−1 K−2 at 767 K among the samples. The maximum dimensionless figure-of-merit zT of the Mn2V(Al0.96Si0.04) sample with fAD = 33 % was measured to be 3.4×10−2 at 767 K, which is the highest among the p-type half-metallic full-Heusler alloys.