Excellent energy storage properties, domain mechanism, and temperature stability of lead-free BaTiO3-Bi(Mg1/2Sn1/2)O3 bulk ferroelectrics
Dan Qie, Zhenhua Tang, Junlin Fang, Dijie Yao, Li Zhang, Yanping Jiang, Qi‐Jun Sun, Dan Zhang, Jingmin Fan, Xin‐Gui Tang, Qiu‐Xiang Liu, Yichun Zhou
Abstract
Pulsed power systems require high-performance capacitors with high energy storage density. In this work, (1 − x)BaTiO3-xBi(Mg1/2Sn1/2)O3 ferroelectric ceramics were synthesized in a solid-state solution. The sample of x = 0.12 (0.88BT-0.12BMS) has excellent energy storage density, wide temperature, and wide frequency stability. The excellent energy density of 4.87 J/cm3 at 315 kV/cm and the energy efficiency of 72% at room temperature for 0.88BT-0.12BMS ceramics were achieved. Furthermore, the 0.88BT-0.12BMS ceramics demonstrated well temperature stabilities in the range of 20–100 °C and very good frequency stability in the range of 1–100 Hz. Through pulsed charging–discharging testing, the current density is calculated as 314.01 A/cm2, and the power density is 21.98 MW/cm3. Moreover, the oxygen vacancies' defects and ferroelectric domain mechanism for enhanced breakdown strength as well as high energy density were discussed. These findings broaden the horizon for lead-free dielectrics and show promising applications for pulse power capacitors.