Threshold switching in chalcogenide GeTe and GeTeS thin films prepared <i>via</i> plasma enhanced atomic layer deposition
Jin Joo Ryu, Kanghyoek Jeon, Hyunchul Sohn, Gun Hwan Kim
Abstract
Multi-component chalcogenide thin films of GeTe x and GeTe x S 1− x are prepared by atomic layer deposition technique. With the conformal deposition characteristics, its electrical properties of threshold switching are demonstrated for emerging computing.
Topics & Concepts
ChalcogenideMaterials scienceAtomic layer depositionLayer (electronics)Deposition (geology)Thin filmPlasmaOptoelectronicsNanotechnologyPaleontologyPhysicsSedimentQuantum mechanicsBiologyPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsAdvanced Memory and Neural Computing