Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate
Lakshay Gautam, Junhee Lee, Gail J. Brown, Manijeh Razeghi
Abstract
We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.
Topics & Concepts
PhotodetectorMaterials scienceDark currentSapphireOptoelectronicsUltravioletSubstrate (aquarium)OpticsLaserPhysicsGeologyOceanographyGaN-based semiconductor devices and materialsGa2O3 and related materialsPhotocathodes and Microchannel Plates