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Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

Shailendra Singh, Balwinder Raj

2020Journal of Computational Electronics44 citationsDOI

Topics & Concepts

Tunnel field-effect transistorQuantum tunnellingTransistorField-effect transistorMetal gateGate oxidePoisson's equationMaterials scienceDepletion regionBoundary value problemVoltageOptoelectronicsPhysicsQuantum mechanicsSemiconductorAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies
Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor | Litcius