Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function
Xinrui Guo, Xiaoyang Ma, Franz Müller, Ricardo Olivo, Juejian Wu, Kai Ni, Thomas Kämpfe, Yongpan Liu, Huazhong Yang, Xueqing Li
Abstract
This paper investigates reconfigurable physical unclonable function (PUF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PUFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PUF splits random ‘0’ and ‘1’ states using a tactically pre-defined reference. The 2T/C PUF needs no dedicated references and obtains unbiased random states by differentiating two FeFETs under a proposed sensing error cancellation scheme. Experimental measurements have shown the uniform randomness, uniqueness, repeatability and reconfigurability of the response. Further simulations using an experimentally calibrated multi-domain FeFET model show high energy efficiency and robustness on design parameters.