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High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

M.B. Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Alexander Sredenschek, Zhuohang Yu, Kalyan Jyoti Sarkar, Muhtasim Ul Karim Sadaf, Kalaiarasan Meganathan, Andrew Pannone, Ying Han, David Sánchez, Divya Somvanshi, Zdeněk Sofer, Mauricio Terrones, Yang Yang, Saptarshi Das

2024Nature Electronics83 citationsDOI

Topics & Concepts

DopingMaterials scienceField-effect transistorField (mathematics)OptoelectronicsTransistorCondensed matter physicsElectrical engineeringPhysicsMathematicsEngineeringVoltagePure mathematics2D Materials and ApplicationsGraphene research and applicationsPerovskite Materials and Applications
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials | Litcius