High‐Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures
Wenxiang Wang, Jiyou Jin, Yanrong Wang, Zheng Wei, Yushi Xu, Zhisheng Peng, Hui Liu, Yu Wang, Jiawang You, Julienne Impundu, Qiang Zheng, Yong Jun Li, Lianfeng Sun
Abstract
Abstract High‐performance optoelectronic nonvolatile memory is promising candidate for next‐generation information memory devices. Here, a floating‐gate memory is constructed based on van der Waals heterostructure, which exhibits a large storage window ratio (≈75.5%) and an extremely high on/off ratio (10 7 ), as well as an ultrafast electrical writing/erasing speed (40 ns). The enhanced performance enables as‐fabricated devices to present excellent multilevel data storage, robust retention, and endurance performance. Moreover, stable optical erasing operations can be achieved by illuminating the device with a laser pulse, showcasing outstanding optoelectronic storage performance (optical erasing speed ≈ 2.3 ms). The nonvolatile and high‐speed characteristics of these devices hold significant potential for the integration of high‐performance nonvolatile memory.