Neuromorphic learning with Mott insulator NiO
Zhen Zhang, Sandip Mondal, Subhasish Mandal, Jason M. Allred, Neda Alsadat Aghamiri, Alireza Fali, Zhan Zhang, Hua Zhou, Hui Cao, Fanny Rodolakis, J. L. McChesney, Qi Wang, Yifei Sun, Yohannes Abate, Kaushik Roy, Karin M. Rabe, Shriram Ramanathan
Abstract
, habituation and sensitization of NiO possess time-dependent plasticity relying on both strength and time interval between stimuli. A combination of experimental approaches and first-principles calculations reveals that such learning behavior of NiO results from dynamic modulation of its defect and electronic structure. An artificial neural network model inspired by such nonassociative learning is simulated to show advantages for an unsupervised clustering task in accuracy and reducing catastrophic interference, which could help mitigate the stability-plasticity dilemma. Mott insulators can therefore serve as building blocks to examine learning behavior noted in biology and inspire new learning algorithms for artificial intelligence.