Optimization of photo-thermoelectric performance in SnSe crystals via doping engineering
Li‐Da Chen, Hongtao Jiang, Cheng-Hao Yin, Enrui Zhang, Yueying Hou, Xiaoli Zhou, Fan Wang, Yang‐Yang Lv, Xuejun Yan, Jian Zhou, Shu‐Hua Yao, Y. B. Chen, Ming‐Hui Lu, Yan‐Feng Chen
Abstract
Thermoelectric materials, based on photo-thermoelectric effect (PTE), may be promising in photo-detection because of their self-power, extremely broad-band, and free of cryogenic attachments. Up to now, the performance of PTE is mainly optimized through enhancement of extrinsic absorption such as using optical metamaterials. Instead, we here improve the PTE through materials engineering, accordingly systematically investigated the PTE of both P- and N-type SnSe crystals with different carrier concentrations (1017–1019 cm−3). P-type SnSe has much better photo-thermoelectric performance than the N-type one. Among P-type SnSe, the SnSe crystal with the largest carrier concentration (∼1019 cm−3 at room temperature) demonstrates the highest photo-thermoelectric performance. Analysis by a modified two-temperature model suggests that the key parameter of enhanced PTE is the high electrical conductivity, which leads to large optical absorption and large temperature difference. Our work provides a guideline on how to engineer thermoelectric materials to enhance their photo-thermoelectric performance.