Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications
Fu‐He Hsiao, Tzu‐Yi Lee, Wen‐Chien Miao, Yi-Hua Pai, Daisuke Iida, Chun‐Liang Lin, Fang‐Chung Chen, Chi‐Wai Chow, Chien‐Chung Lin, Ray‐Hua Horng, Jr‐Hau He, Kazuhiro Ohkawa, Yu‐Heng Hong, Chiao‐Yun Chang, Hao‐Chung Kuo
Abstract
Abstract In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm 2 . These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.