Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity
Yu Lu, Feng Zhou, Weizong Xu, Dongsheng Wang, Yuanyang Xia, Youhua Zhu, Danfeng Pan, Fangfang Ren, Dong Zhou, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Abstract
In this letter, an anode configuration with multi-aperture structure and fully recessed AlGaN barrier layer is proposed in the AlGaN/GaN Schottky barrier diode. With the Schottky junction formed between the Ni anode metal and the channel of two-dimensional electron gas, as well as the evidently enlarged contact profile by the introduction of multiple apertures, the device's forward turning-on performances are dominated by the sidewall Schottky contact, achieving a low turn on voltage of 0.35 V with high uniformity. Accompanied with the high breakdown voltage of 2770 V, the diode achieved a power figure-of-merit as high as 1.1 GW cm−2.