Stable Bipolar Resistive Switching in Lead-Free Cs<sub>2</sub>AgBiBr<sub>6</sub> Memristors for Neuromorphic Computing
Fanju Zeng, Yongqian Tan, Baofei Sun, Wei Hu, Haifeng Yin, Xiaosheng Tang, Lianshuai Huang, Juan Liao, Minli Tang
Abstract
High Resolution Image Download MS PowerPoint Slide The lead-free double-perovskite Cs 2 AgBiBr 6, which combines nontoxicity with superior stability, has been highlighted as an ecofriendly alternative to lead-halide perovskites in photoelectric devices by recent advancements. Herein, Cs 2 AgBiBr 6 films were successfully synthesized on a fluorine-doped tin oxide (FTO) glass substrate via a spin-coating method in a dry-air glovebox (relative humidity (RH) less than 20%), eliminating the need for antisolvent dripping or inert gas protection. The films exhibited a uniform morphology, with root-mean-square (RMS) and average ( R a ) roughness values of 15.4 and 11.9 nm, respectively. The fabricated Cs 2 AgBiBr 6 -based memristors demonstrated stable, repeatable bipolar resistive switching behavior with low operating voltages (+0.4 V, −0.3 V), an on/off ratio of 479, an endurance of 1000 cycles, and a retention time of 10 4 s. Remarkably, the resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) remained stable at approximately 441 even after 30 days of ambient storage. Furthermore, the memristor mimicked biological synaptic functions, achieving an accuracy of 91.39% in machine learning simulations. These findings highlight the viability of using Cs 2 AgBiBr 6 in both memory and computational applications, thus offering a promising pathway for developing sustainable and efficient memristor-based systems for use in neuromorphic computing and information storage.