Grain engineering for improved charge carrier transport in two-dimensional lead-free perovskite field-effect transistors
Shuanglong Wang, Sabine Frisch, Heng Zhang, Okan Yildiz, Mukunda Mandal, Naz Ugur, Beomjin Jeong, Charusheela Ramanan, Denis Andrienko, Hai I. Wang, Mischa Bonn, Paul W. M. Blom, Milan Kivala, Wojciech Pisula, Tomasz Marszałek
Abstract
Controlling crystal growth and reducing the number of grain boundaries are crucial to maximize the charge carrier transport in organic–inorganic perovskite field-effect transistors (FETs).
Topics & Concepts
Materials sciencePerovskite (structure)Field-effect transistorTransistorCharge (physics)Grain boundaryCharge carrierOptoelectronicsLead (geology)NanotechnologyElectrical engineeringChemistryCrystallographyComposite materialPhysicsVoltageEngineeringMicrostructureGeomorphologyQuantum mechanicsGeologyPerovskite Materials and ApplicationsConducting polymers and applicationsOrganic Light-Emitting Diodes Research