Temperature-Dependent Dynamic R<sub>on</sub> of GaN E-HEMTs: The Impact of p-GaN Drain
Shaocheng Li, Kuang Sheng, Shu Yang
Abstract
In this article, the temperature-dependent dynamic ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{ON}}$ </tex-math></inline-formula> ) behaviors of GaN enhancement-mode (E-mode) high-electron-mobility transistors (E-HEMTs) with and without a p-GaN drain (PD) structure under both hard-switching (HS) and soft-switching (SS) have been systematically studied and analyzed, whereby the influences of temperature, OFF-state voltage stress, the PD structure, HS/SS, switching transients during HS, and ON-state current on dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{ON}}$ </tex-math></inline-formula> of GaN E-HEMTs have been revealed. It is found that higher temperature, higher OFF-state voltage stress, or larger ON-state current particularly under HS can facilitate the turn-on of the PD hetero-junction and enhance hole injection, which can effectively compensate the negative trapped charges and alleviate dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{ON}}$ </tex-math></inline-formula> degradation. The characterizations and analysis in this work can provide valuable insights into the mechanisms of superior dynamic performance in high-temperature and high-power applications.