Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide
Clemens Mart, Sukhrob Abdulazhanov, M. Czernohorsky, Thomas Kämpfe, David Lehninger, Konstantinos Efstathios Falidas, S. Eslinger, Kati Kühnel, Sebastian Oehler, Matthias Rudolph, Maciej Wiatr, Sabine Kolodinski, Robert Seidel, Wenke Weinreich, Lukas M. Eng
Abstract
We demonstrate the feasibility of thermal energy recovery in the back end of line (BEoL) employing CMOS-compatible ferroelectric hafnium oxide. Efficient pyroelectric energy harvesting with a sizable power density of 92 mWcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> under typical thermal conditions is achieved. Our energy harvesting approach exceeds the efficiency limit of commonly-used thermoelectric materials, without using a heat switch. The low-voltage operation, scalability, and abundance in CMOS manufacturing make HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ferroelectrics promising candidates for integrated energy harvesting and solid-state refrigeration applications.