Improving performance of monolayer arsenene tunnel field-effect transistors by defects
Shun Song, Jian Gong, Hongyu Wen, Shenyuan Yang
Abstract
, allowing the device to work as an HP device. We further confirm that the enhancement of the ON-state currents is due to the shortening of the band-to-band tunneling path through the defect induced gap states. Our calculations provide a theoretical guide to improve the performance of TFETs based on arsenene or other monolayer materials by suitable defects.
Topics & Concepts
ZigzagSubthreshold swingQuantum tunnellingMonolayerTransistorMaterials scienceField-effect transistorOptoelectronicsNanotechnologySemiconductorTunnel field-effect transistorCondensed matter physicsPhysicsVoltageQuantum mechanicsGeometryMathematicsAdvancements in Semiconductor Devices and Circuit DesignGraphene research and applicationsFerroelectric and Negative Capacitance Devices