Fourfold Polarization‐Sensitive Photodetector Based on GaTe/MoS<sub>2</sub> van der Waals Heterojunction
Jin Tan, Haiyan Nan, Quangui Fu, Xiu‐Mei Zhang, Xing Liu, Zhenhua Ni, Kostya Ostrikov, Shaoqing Xiao, Xiaofeng Gu
Abstract
Abstract Integrated polarization‐sensitive photodetectors fabricated by geometric anisotropic 2D materials have become attractive in recent years. In this work, the successful construction of self‐driven and polarization‐sensitive photodetectors based on GaTe/MoS 2 p–n van der Waals (vdW) heterojunction is demonstrated by mechanical exfoliation and dry transfer methods. The fabricated GaTe/MoS 2 vdW heterojunctions show ambipolar behavior, and the highest rectification ratio can reach 93.4. The highest responsivity under 532 nm illumination reaches 145 mA W −1 and the response time is less than 10 ms. Moreover, the photocurrent polarization of the fabricated GaTe/MoS 2 photodetectors manifests in fourfold anisotropy with a high polarization ratio of 2.9, which can be ascribed to the highly anisotropic monoclinic structure of layered m‐GaTe. This finding thus offers more information and creates new opportunities about how to fabricate integrated polarization‐sensitive photodetectors.