RGB monolithic GaInN-based μLED arrays connected via tunnel junctions
T. Saito, Naoki Hasegawa, Keigo Imura, Yoshinobu Suehiro, Tetsuya Takeuchi, Satoshi Kamiyama, Daisuke Iida, Kazuhiro Ohkawa, Motoaki Iwaya
Abstract
Abstract We report a 330 ppi monolithic RGB micro light-emitting diodes ( μ LED) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type AlGaN. The fabricated stacked monolithic μ LED arrays were tested at room temperature (approximately 26 °C) and DC. Each μ LED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A cm −2 .