Si doping mechanism in MOVPE-grown (100) <b>β</b>-Ga2O3 films
Ta‐Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, K. Irmscher, Palvan Seyidov, W. Miller, Zbigniew Galazka, M. Albrecht, Andreas Popp
Abstract
A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) β-Ga2O3 thin films is proposed in terms of the competitive surface adsorption process between Si and Ga atoms. The outcome of the model can describe the major feature of the doping process and indicate a growth rate-dependent doping behavior, which is validated experimentally and further generalized to different growth conditions and different substrate orientations.
Topics & Concepts
Metalorganic vapour phase epitaxyDopingEpitaxyAdsorptionMaterials scienceSubstrate (aquarium)Thin filmGrowth rateChemical vapor depositionSiliconAnalytical Chemistry (journal)CrystallographyLayer (electronics)Physical chemistryOptoelectronicsNanotechnologyChemistryChromatographyOceanographyMathematicsGeometryGeologyGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques