Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano
Topics & Concepts
Metalorganic vapour phase epitaxyEpitaxyAcceptorDopingAnalytical Chemistry (journal)HalideChemistryHall effectMaterials scienceElectron mobilityElectrical resistivity and conductivityInorganic chemistryOptoelectronicsLayer (electronics)NanotechnologyEngineeringChromatographyElectrical engineeringPhysicsCondensed matter physicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties