Modified Moore–Gibson–Thompson photo-thermoelastic model for a rotating semiconductor half-space subjected to a magnetic field
Ahmed E. Abouelregal, Hijaz Ahmad, S.K. Elagan, Nawal A. Alshehri
Abstract
This paper focuses on studying thermal, elastic and coupled plasma waves, in the sense of a photo-thermal process transport within an infinite semiconductor medium. In order to study photo-thermal interactions in two-dimensional semiconducting materials, a new mathematical model based on the Moore–Gibson–Thompson equation (MGTE) is implemented. The MGTE model involving the Green–Naghdi model of type III as well as the heat transport equation proposed by Lord and Shulman. We consider the semi-conductor half-space is rotated at a uniform angular speed and magnetized. The analysis of the distribution of thermophysical fields has been extracted by a normal mode method, represented graphically and discussed. The results predicted by the new and improved model have been compared with the generalized and classic ones. In addition, all field quantities have been examined for effects of rotation, a lifetime of the photo-generated, and the applied magnetic field.