High-responsivity MoS2 hot-electron telecom-band photodetector integrated with microring resonator
Qiao Zhang, Yingke Ji, Siqi Hu, Zhiwen Li, Chen Li, Linpeng Gu, Ruijuan Tian, Jia‐Chen Zhang, Liang Fang, Bijun Zhao, Jianlin Zhao, Xuetao Gan
Abstract
We report a high-responsive hot-electron photodetector based on the integration of an Au–MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au–MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W−1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500–1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.