Manipulation of Shallow-Trap States in Halide Double Perovskite Enables Real-Time Radiation Dosimetry
Yu‐Min Wang, Yumin Wang, Gaoyuan Chen, Zibin Zhu, Haoming Qin, Liangwei Yang, Duo Zhang, Yingguo Yang, Menglin Qiu, Ke Liu, Zhifang Chai, Wan‐Jian Yin, Yaxing Wang, Yaxing Wang, Shuao Wang
Abstract
High Resolution Image Download MS PowerPoint Slide Storage phosphors displaying defect emissions are indispensable in technologically advanced radiation dosimeters. The current dosimeter is limited to the passive detection mode, where ionizing radiation-induced deep-trap defects must be activated by external stimulation such as light or heat. Herein, we designed a new type of shallow-trap storage phosphor by controlling the dopant amounts of Ag + and Bi 3+ in the host lattice of Cs 2 NaInCl 6 . A distinct phenomenon of X-ray-induced emission (XIE) is observed for the first time in an intrinsically nonemissive perovskite. The intensity of XIE exhibits a quantitative relationship with the accumulated dose, enabling a real-time radiation dosimeter. Thermoluminescence and in situ X-ray photoelectron spectroscopy verify that the emission originates from the radiative recombination of electrons and holes associated with X-ray-induced traps. Theoretical calculations reveal the evolution process of Cl–Cl dimers serving as hole trap states. Analysis of temperature-dependent radioluminescence spectra provides evidence that the intrinsic electron–phonon interaction in 0.005 Ag + @ Cs 2 NaInCl 6 is significantly reduced under X-ray irradiation. Moreover, 0.025 Bi 3+ @ Cs 2 NaInCl 6 shows an elevated sensitivity to the accumulated dose with a broad response range from 0.08 to 45.05 Gy. This work discloses defect manipulation in halide double perovskites, giving rise to distinct shallow-trap storage phosphors that bridge traditional deep-trap storage phosphors and scintillators and enabling a brand-new type of material for real-time radiation dosimetry.